composite transistors 1 publication date: february 2005 sjj00308aed XN0NE92 silicon p-channel mosfet (fet) silicon epitaxial planar type (sbd) for dc-dc converter features ? two elements incorporated into one package ? reduction of the mounting area and assembly cost by one half ? high-speed switching, low on resistance basic part number ? ds1125 + ma2zd12 absolute maximum ratings t a = 25 c marking symbol: 3f internal connection unit: mm parameter symbol conditions min typ max unit drain-source surrender voltage v dss i c = ? 1 ma, v gs = 0 ? 12 v drain-source cutoff current i dss v ds = ? 10 v, v gs = 0 ? 1v gate-source cutoff current i gss v gs = 8 v, v ds = 0 10 v gate threshold voltage v th v ds = ? 10 v, i d = ? 1 ma ? 0.4 ? 1.3 v forward transfer admittance * ? yfs ? v ds = ? 10 v, i d = ? 800 ma 0.8 1.1 s drain-source on resistance * r ds(on) v gs = ? 4 v, i d = ? 800 ma 350 450 m ? turn-on time t on v dd = ? 10 v, r l = 12.5 ? ,15ns storage time t stg i d = ? 800 ma, v gs = 0 v to ? 4 v 10 ns turn-off time t off 10 ns electrical characteristics t a = 25 c 3 c ? fet note) * : measuring on ceramic substrate at 15 mm 15 mm 0.6 mm 2.90 1.9 0.1 0.16 +0.10 ?0.06 2.8 +0.2 ?0.3 1.1 +0.2 ?0.1 1.1 0 to 0.1 +0.1 ?0.1 1.50 (0.65) 0.4 0.2 +0.25 ?0.05 (0.95) (0.95) 0.30 +0.10 ?0.05 4 2 1 3 5 +0.20 ?0.05 5? 10? parameter symbol rating unit fet drain-source surrender v dss ? 12 v voltage gate-source surrender v gss 15 v voltage drain current i d ? 1.2 a peak drain current i dp ? 3a total power dissipation * p t 600 mw channel temperature t ch 125 c storage temperature t stg ? 55 to + 125 c sbd reverse voltage v r 20 v repetitive peak reverse voltage v rrm 25 v forward current (average) i f(av) 700 ma non-repetitive peak i fsm 2a forward surge current note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. observe precautions for handling. electrostatic sensitive devices. 3. * : pulse measurement 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode mini5-g1 package (XN0NE92) 5 (a) (d) 2 3 (g) (k) 1 4 (s)
XN0NE92 2 sjj00308aed electrical characteristics (continued) t a = 25 c 3 c ? sbd parameter symbol conditions min typ max unit forward voltage v f i f = 700 ma 0.45 v reverse current i r v r = 20 v 200 a terminal capacitance c t v r = 0, f = 1 mhz 100 pf reverse recovery time t rr i f = i r = 100 ma 7 ns i rr = 10 ma, r l = 100 ? note) 1. measuring methods are based on japanese industrial standard jis c 7031 measuring methods for diodes. 2. schottky barrier diode is frail with static electricity, and it should be kept in safety from shock of static electricity and static electricity level.
request for your special attention and precautions in using the technical information and semiconductors described in this material (1) an export permit needs to be obtained from the competent authorities of the japanese government if any of the products or technical information described in this material and controlled under the "foreign exchange and foreign trade law" is to be exported or taken out of japan. (2) the technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. it neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) we are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) the products described in this material are intended to be used for standard applications or general elec- tronic equipment (such as office equipment, communications equipment, measuring instruments and house- hold appliances). consult our sales staff in advance for information on the following applications: ? special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus- tion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. ? any applications other than the standard applications intended. (5) the products and product specifications described in this material are subject to change without notice for modification and/or improvement. at the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date product standards in advance to make sure that the latest specifica- tions satisfy your requirements. (6) when designing your equipment, comply with the guaranteed values, in particular those of maximum rat- ing, the range of operating power supply voltage, and heat radiation characteristics. otherwise, we will not be liable for any defect which may arise later in your equipment. even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) when using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) this material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of matsushita electric industrial co., ltd. 2003 sep
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